Indium Phosphide

Study of High Quality Large Diameter Indium Phosphide Single Crystal

高质量、大直径磷化铟单晶研究

Indium Phosphide ( InP ) has been indispensable to both optical and electronic devices .

磷化铟（InP）已成为光电器件和微电子器件不可或缺的重要半导体材料。

Investigation on C band infrared luminescence in indium phosphide

InP中和C带有关深能级的近红外光致发光

Abstract Indium phosphide clusters were formed in the preparation of nanocrystalline InP through a nonaqueous thermal process .

在非水体系加压热处理制备纳米磷化铟中观察到了磷化铟团簇，该团簇在UV－Vis光谱285nm处出现吸收。

Uniformity of Undoped Semi-Insulating Indium Phosphide Wafers

非掺半绝缘磷化铟晶片的制备及其均匀性

With the advancement of the planar epitaxy technique for Indium phosphide ( InP ), highly-reliable active semiconductor devices have been widely adopted in a variety of fields .

随着磷化铟材料外延技术的进步，高可靠性的半导体有源器件已走向成熟，被广泛应用于各个领域。

ⅲ - ⅴ compound semiconductors , such as Gallium arsenide ( GaAs ), Indium phosphide ( InP ) and their doped materials , are suitable to make high speed and high power PCSS with picosecond ( ps ) time response .

利用Ⅲ-Ⅴ族化合物半导体材料砷化镓（GaAs）和磷化铟（InP）及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性。